DEVICE PHYSICS Topological transistor

被引：41
|
作者：
Wray, L. Andrew [1 ]
机构：
[1] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94305 USA
来源：
NATURE PHYSICS | 2012年 / 8卷 / 10期
关键词：
INSULATORS;
D O I：
10.1038/nphys2410
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Devices based on surface electrons in topological insulators are keenly anticipated, but singling these electrons out amid abundant bulk electrons poses a formidable challenge. Inspiration from the common transistor now enables manipulation of these exotic states.
引用
收藏
页码：705 / 706
页数：2
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