DEVICE MODELING AND PHYSICS

The state of the art in self-consistent numerical modeling of semiconductor devices is reviewed. The physical assumptions which are required to describe carrier transport in highly miniaturized semiconductor devices are discussed. Particular emphasis is put on the physical models for space charge, carrier mobility, carrier temperature, and carrier generation-recombination for silicon devices. The numerical solution of the semiconductor device equations is commented. Investigations about three-dimensional effects in MOS-devices are presented as typical results.