PHOTOELECTRON HOLOGRAPHY OF PB/SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-BETA

被引：15
|
作者：
ROESLER, JM
SIEGER, MT
MILLER, T
CHIANG, TC
机构：
[1] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, FREDERICK SEITZ MAT RES LAB, URBANA, IL 61801 USA
来源：
SURFACE SCIENCE | 1995年 / 329卷 / 1-2期
基金：
美国国家科学基金会;
关键词：
ADATOMS; ANGLE RESOLVED PHOTOEMISSION; LEAD; PHOTOELECTRON HOLOGRAPHY; SILICON; SINGLE CRYSTAL SURFACES; SOFT X-RAY PHOTOELECTRON SPECTROSCOPY; SURFACE STRUCTURE;
D O I：
10.1016/0039-6028(95)00232-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The technique of holographic image reconstruction based on photoelectron detection has been applied to the Pb/Si(111)-(root 3 X root 3)R30 degrees-beta phase for a determination of the surface structure. Angle-resolved photoemission from the Pb5d core level shows intensity oscillations as a function of photon energy. These constant-initial-state spectra were taken at various emission angles and Fourier inverted to yield three-dimensional real-space images of the nearest neighbors to the emitter atom. These images clearly show Pb atoms adsorbed at the T-4, site.
引用
收藏
页码：L588 / L592
页数：5
相关论文
共 50 条
  • [21] VIBRATIONAL PROPERTIES OF THE SI(111)GA(ROOT-3X-ROOT-3) SURFACE
    SCHMIDT, J
    IBACH, H
    MULLER, JE
    PHYSICAL REVIEW B, 1995, 51 (08): : 5233 - 5238
  • [22] QUANTITATIVE-ANALYSIS OF THE AZIMUTHAL DEPENDENCE OF ION-SCATTERING FROM SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-AG
    CHAUDHURY, S
    WILLIAMS, RS
    KATAYAMA, M
    AONO, M
    SURFACE SCIENCE, 1993, 294 (1-2) : 93 - 98
  • [23] ROOT-3X-ROOT-3 RECONSTRUCTIONS OF SI(111) AND GE(111) INDUCED BY AG AND AU
    NOGAMI, J
    WAN, K
    GLUECKSTEIN, JC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6B): : 3679 - 3682
  • [24] CHEMICAL-REACTIVITY OF THE SI(111) (ROOT-3X-ROOT-3) R30-DEGREES-B SURFACE - AN ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY
    TAGUCHI, Y
    DATE, M
    TAKAGI, N
    ARUGA, T
    NISHIJIMA, M
    APPLIED SURFACE SCIENCE, 1994, 82-3 : 434 - 436
  • [25] BI ON SI(111) - 2 PHASES OF THE ROOT-3X-ROOT-3 SURFACE RECONSTRUCTION
    SHIODA, R
    KAWAZU, A
    BASKI, AA
    QUATE, CF
    NOGAMI, J
    PHYSICAL REVIEW B, 1993, 48 (07): : 4895 - 4898
  • [26] IN/SI(111)-ROOT-3X-ROOT-3 INTERFACE - AN UNRELAXED T(4) GEOMETRY
    WOICIK, JC
    KENDELEWICZ, T
    HERRERAGOMEZ, A
    MIYANO, KE
    COWAN, PL
    BOULDIN, CE
    PIANETTA, P
    SPICER, WE
    PHYSICAL REVIEW LETTERS, 1993, 71 (08) : 1204 - 1207
  • [27] ON THE TEMPERATURE-INDUCED TRANSFORMATION BETWEEN THE 2 AL(111)-(ROOT-3X-ROOT-3) R30-DEGREES-RB STRUCTURES
    LUNDGREN, E
    NYHOLM, R
    BURCHHARDT, J
    HESKETT, D
    ANDERSEN, JN
    SURFACE SCIENCE, 1995, 343 (1-2) : 37 - 43
  • [28] AU ADATOM SUPERSTRUCTURE ON THE AG SI(111)-ROOT-3X-ROOT-3-R30-DEGREES SURFACE
    NOGAMI, J
    WAN, KJ
    LIN, XF
    SURFACE SCIENCE, 1994, 306 (1-2) : 81 - 86
  • [29] THEORETICAL INVESTIGATION OF THE STRUCTURE OF THE (ROOT-3X-ROOT-3R30-DEGREES-AU/SI(111) SURFACE
    DING, YG
    CHAN, CT
    HO, KM
    SURFACE SCIENCE, 1992, 275 (03) : L691 - L696
  • [30] ELECTRON-TRANSPORT IN THE SI(111)-CR(ROOT-3X-ROOT-3)R30-DEGREES-ALPHA-SI SURFACE PHASE AND IN EPITAXIAL-FILMS OF CRSI, CRSI2 ON SI(111)
    GASPAROV, VA
    GRAZHULIS, VA
    BONDAREV, VV
    BYCHKOVA, TM
    LIFSHITS, VG
    GALKIN, NG
    PLUSNIN, NI
    SURFACE SCIENCE, 1993, 292 (03) : 298 - 304
12345