IDENTITY OF DEFECTS IN ION-IMPLANTED SILICON

被引：0
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作者：
BROWER, KL
VOOK, FL
STEIN, HJ
BORDERS, JA
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 11期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C375 / &
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