IDENTITY OF DEFECTS IN ION-IMPLANTED SILICON

被引：0
|
作者：
BROWER, KL
VOOK, FL
STEIN, HJ
BORDERS, JA
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C375 / &
相关论文
共 50 条
  • [11] STUDY OF DEFECTS IN PHOSPHORUS ION-IMPLANTED SILICON.
    Shen, Hou-yun
    Pan, Xian-zheng
    Guo, Huai-xi
    Jian, Jin-chen
    Xi You Jin Shu/Rare Metals, 1986, 5 (02): : 105 - 108
  • [12] SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON.
    Jones, K.S.
    Prussin, S.
    Weber, E.R.
    Applied physics. A, Solids and surfaces, 1988, A45 (01): : 1 - 34
  • [13] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON
    BROWER, KL
    VOOK, FL
    BORDERS, JA
    APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &
  • [14] LUMINESCENCE SPECTRA OF DEFECTS IN ION-IMPLANTED SILICON-CARBIDE
    KODRAU, NV
    MAKAROV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 813 - 814
  • [15] PRIMARY DEFECTS IN LOW-FLUENCE ION-IMPLANTED SILICON
    WANG, KL
    APPLIED PHYSICS LETTERS, 1980, 36 (01) : 48 - 50
  • [16] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [17] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [18] STRUCTURE OF ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (12): : 1392 - &
  • [19] ION-IMPLANTED SILICON TRANSISTORS
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1974, 17 (08) : 27 - 27
  • [20] NATURE AND HABIT PLANES OF DEFECTS IN P+ ION-IMPLANTED SILICON
    SESHAN, K
    WASHBURN, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01): : 345 - 352
12345