FIRST PRINCIPLES CALCULATIONS OF INTERFACE PHONONS OF AN EPITAXIAL SB MONOLAYER ON GAAS(110) AND INP(110)

被引：14

作者：

SCHMIDT, WG ^{[1
]}

SRIVASTAVA, GP ^{[1
]}

机构：

[1] FRIEDRICH SCHILLER UNIV JENA, INST FESTKORPERTHEORIE & THEORET OPT, D-07743 JENA, GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 04期

关键词：

D O I：

10.1016/0038-1098(94)90597-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Vibrations of an epitaxial layer of Sb on the (110) surface of GaAs and InP have been investigated using first principles pseudopotential calculations. The Hellmann-Feynman forces were employed to calculate the dynamical matrix at the Gamma-point. The resulting eigenvalues and eigenmodes are discussed in the context of recent Raman scattering experiments and tight-binding results.

引用

页码：345 / 348

页数：4

共 50 条

[41] DETERMINATION OF CONDUCTION-BAND STATES IN GAAS(110), INP(110), AND INAS(110)
FAUL, J
NEUHOLD, G
LEY, L
FRAXEDAS, J
ZOLLNER, S
RILEY, JD
LECKEY, RCG
PHYSICAL REVIEW B, 1993, 47 (19): : 12625 - 12635
[42] Ab initio calculations and dynamical properties of the Se:InP(110) and Te:InP(110)
Cangozen, M.
Tutuncu, H. M.
Guney, Y.
Srivastava, G. P.
SURFACE SCIENCE, 2006, 600 (18) : 3526 - 3530
[43] Silicon Donors at the GaAs(110) Surface: A First Principles Study
Yi, Zhijun
Ma, Yuchen
Rohlfing, Michael
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (47): : 23455 - 23462
[44] SB AND AL CHEMISORPTION ON GAAS(110)
ZHANG, KM
XU, YN
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 729 - 731
[45] GROWTH OF SB OVERLAYERS ON GAAS(110)
STRUMPLER, R
LUTH, H
SURFACE SCIENCE, 1987, 182 (03) : 545 - 556
[46] Core level photoemission study of As interaction with InP(110) and GaAs(110)
He, ZQ
Khazmi, YO
Kanski, J
Ilver, L
Nilsson, PO
Karlsson, UO
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03): : 1515 - 1519
[47] First-principles calculations of the growth of InSb on GaSb(110)
Cocoletzi, GH
Takeuchi, N
PHYSICAL REVIEW B, 2000, 61 (23): : 15581 - 15584
[48] Vibrational properties of the Sb:InP(110) surface
Tütüncü, HM
Srivastava, GP
Ugur, G
SURFACE SCIENCE, 2002, 507 : 1 - 6
[49] TRANSPORT MEASUREMENTS OF SB CONTACTS TO INP(110)
ZAHN, DRT
MCLEAN, AB
WILLIAMS, RH
ESSER, N
RICHTER, W
APPLIED PHYSICS LETTERS, 1988, 52 (09) : 739 - 741
[50] Surface phonons of InP(110) studied by Raman spectroscopy
Hinrichs, K
Schierhorn, A
Haier, P
Esser, N
Richter, W
Sahm, J
PHYSICAL REVIEW LETTERS, 1997, 79 (06) : 1094 - 1097

← 1 2 3 4 5 →