FIRST PRINCIPLES CALCULATIONS OF INTERFACE PHONONS OF AN EPITAXIAL SB MONOLAYER ON GAAS(110) AND INP(110)

被引：14

作者：

SCHMIDT, WG ^{[1
]}

SRIVASTAVA, GP ^{[1
]}

机构：

[1] FRIEDRICH SCHILLER UNIV JENA, INST FESTKORPERTHEORIE & THEORET OPT, D-07743 JENA, GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 04期

关键词：

D O I：

10.1016/0038-1098(94)90597-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Vibrations of an epitaxial layer of Sb on the (110) surface of GaAs and InP have been investigated using first principles pseudopotential calculations. The Hellmann-Feynman forces were employed to calculate the dynamical matrix at the Gamma-point. The resulting eigenvalues and eigenmodes are discussed in the context of recent Raman scattering experiments and tight-binding results.

引用

页码：345 / 348

页数：4

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