MEASUREMENT OF OXYGEN IN SILICON

被引:0
|
作者
BULLIS, WM
COATES, LB
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:69 / 72
页数:4
相关论文
共 50 条
  • [41] OXYGEN PRECIPITATION IN SILICON
    BORGHESI, A
    PIVAC, B
    SASSELLA, A
    STELLA, A
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4169 - 4244
  • [42] THE METALLURGY OF OXYGEN IN SILICON
    MIKKELSEN, JC
    JOURNAL OF METALS, 1985, 37 (05): : 51 - 54
  • [43] DIFFUSION OF OXYGEN IN SILICON
    WATKINS, GD
    CORBETT, JW
    MCDONALD, RS
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7097 - 7098
  • [44] Measurement of interstitial oxygen concentration in silicon below 1015atoms/cm3
    Sassella, A
    APPLIED PHYSICS LETTERS, 2001, 79 (26) : 4339 - 4341
  • [45] MEASUREMENT OF THE OXYGEN AND CARBON CONTENT OF SILICON-WAFERS BY FOURIER-TRANSFORM IR SPECTROPHOTOMETRY
    BAGHDADI, A
    ACS SYMPOSIUM SERIES, 1986, 295 : 208 - 229
  • [46] Structure and diffusion of oxygen and silicon interstitials in silicon
    Institute of Chemical Physics, University of Latvia, Raiņa b. 19, Riga LV-1586, Latvia
    不详
    J Alloys Compd, (254-257):
  • [47] Oxygen defect processes in silicon and silicon germanium
    Chroneos, A.
    Sgourou, E. N.
    Londos, C. A.
    Schwingenschloegl, U.
    APPLIED PHYSICS REVIEWS, 2015, 2 (02):
  • [48] ON THE COMPLEX OF THE OXYGEN INTERSTITIAL AND THE SILICON INTERSTITIAL IN SILICON
    LINDSTROM, JL
    SVENSSON, BG
    CORBETT, JW
    OEHRLEIN, GS
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02): : K109 - K111
  • [49] Structure and diffusion of oxygen and silicon interstitials in silicon
    Dzelme, J
    Ertsinsh, I
    Zapol, B
    Misiuk, A
    JOURNAL OF ALLOYS AND COMPOUNDS, 1999, 286 (1-2) : 254 - 257
  • [50] SUBSTITUTIONAL OXYGEN-OXYGEN PAIR IN SILICON
    DELEO, GG
    MILSTED, CS
    KRALIK, JC
    PHYSICAL REVIEW B, 1985, 31 (06): : 3588 - 3592