MEASUREMENT OF OXYGEN IN SILICON

被引：0
|
作者：
BULLIS, WM
COATES, LB
机构：
来源：
SOLID STATE TECHNOLOGY | 1987年 / 30卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：69 / 72
页数：4
相关论文
共 50 条
  • [1] MEASUREMENT OF OXYGEN ADSORPTION ON SILICON BYELLIPSOMETRY
    ARCHER, RJ
    GOBELI, GW
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) : 343 - &
  • [2] MEASUREMENT OF INTERSTITIAL OXYGEN AND SUBSTITUTIONAL CARBON IN SILICON
    SERIES, RW
    LIVINGSTON, FM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C108 - C108
  • [3] Silicon thin film sensor for measurement of dissolved oxygen
    Wittkampf, M
    Chemnitius, GC
    Cammann, K
    Rospert, M
    Mokwa, W
    SENSORS AND ACTUATORS B-CHEMICAL, 1997, 43 (1-3) : 40 - 44
  • [4] PRECISE AND RAPID MEASUREMENT OF OXYGEN AND CARBON CONCENTRATIONS IN SILICON
    KRISHNAN, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C92 - C92
  • [5] MEASUREMENT OF OXYGEN AND CARBON CONTENT OF SEMICONDUCTOR GRADE SILICON
    CROSS, C
    GAETANO, G
    TUCKER, TN
    BAKER, JA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : C248 - &
  • [6] MEASUREMENT OF THE OUT-DIFFUSION PROFILE OF OXYGEN IN SILICON
    SUGITA, Y
    KAWATA, H
    NAKAMICHI, S
    OKABE, T
    WATANABE, T
    YOSHIKAWA, S
    ITOH, Y
    NOZAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10): : 1302 - 1306
  • [7] DETERMINATION OF CONVERSION FACTOR FOR INFRARED MEASUREMENT OF OXYGEN IN SILICON
    IIZUKA, T
    TAKASU, S
    TAJIMA, M
    ARAI, T
    NOZAKI, T
    INOUE, N
    WATANABE, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1707 - 1713
  • [8] MOS MEASUREMENT OF OXYGEN RECOILS FROM AS IMPLANTATION INTO SILICON DIOXIDE
    GOETZBERGER, A
    BARTELINK, DJ
    MCVITTIE, JP
    GIBBONS, JF
    APPLIED PHYSICS LETTERS, 1976, 29 (04) : 259 - 261
  • [9] Effect of dopant on the accuracy of oxygen measurement in silicon by Gas Fusion Analysis
    Chiou, HD
    Pajela, RT
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 109 - 116
  • [10] MEASUREMENT OF SURFACE OXYGEN-CONTENT IN SILICON-NITRIDE POWDERS
    WATANABE, K
    TAKATSU, S
    SATO, M
    TAJIMA, Y
    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1993, 101 (12): : 1419 - 1422
12345