A UNIVERSAL MOSFET MOBILITY DEGRADATION MODEL FOR CIRCUIT SIMULATION

被引：0
|
作者：
YERIC, GM
TASCH, AF
BANERJEE, SK
机构：
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1990年 / 9卷 / 10期
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D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
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页码：1123 / 1126
页数：4
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