共 50 条
- [21] DETERMINATION OF THE VALENCE-BAND OFFSET OF GAAS-(GA,IN)P QUANTUM-WELLS BY PHOTOREFLECTANCE SPECTROSCOPY PHYSICAL REVIEW B, 1992, 46 (03): : 1886 - 1888
- [22] CURRENT-VOLTAGE CHARACTERISTICS OF P-P ISOTYPE INGAALP GAAS HETEROJUNCTION WITH A LARGE VALENCE-BAND DISCONTINUITY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5A): : 1919 - 1922
- [23] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS PHYSICAL REVIEW B, 1980, 21 (08): : 3513 - 3522
- [24] Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures TERAHERTZ FOR MILITARY AND SECURITY APPLICATIONS IV, 2006, 6212
- [27] VALENCE-BAND OFFSETS AND FORMATION ENTHALPY OF RECONSTRUCTED GAAS/GE(001) INTERFACES PHYSICAL REVIEW B, 1990, 41 (14): : 10264 - 10267