共 50 条
- [11] Experimental observation of acoustic plasma oscillations in p-GaAs associated with inter-valence-band photoeffect COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 791 - 794
- [12] Current voltage characteristics of p-p isotype InGaAlP/GaAs heterojunction with a large valence-band discontinuity Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (5 S): : 1919 - 1922
- [15] Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions Physical Review B: Condensed Matter, 54 (8/PT2):
- [16] Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions PHYSICAL REVIEW B, 1996, 54 (08): : 5691 - 5695
- [17] PARABOLIC VALENCE-BAND DISPERSION IN GAAS FOR OPTICAL INTERBAND-TRANSITIONS PHYSICAL REVIEW B, 1994, 50 (20): : 15445 - 15448
- [19] Valence-band photoemission from GaN(001) and GaAs: GaN surfaces PHYSICAL REVIEW B, 1997, 56 (20): : 13326 - 13334
- [20] THE SI/GAAS (110) HETEROJUNCTION - STRAIN, DISORDER, AND VALENCE-BAND DISCONTINUITY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1279 - 1283