LOW-THRESHOLD CURRENT-DENSITY 1.3-MU-M STRAINED-LAYER QUANTUM-WELL LASERS USING N-TYPE MODULATION DOPING

被引：15

作者：

YAMAMOTO, T

WATANABE, T

IDE, S

TANAKA, K

NOBUHARA, H

WAKAO, K

机构：

[1] Fujitsu Laboratories Ltd., Atsugi

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 10期

关键词：

Cavity resonators - Charge carriers - Electric current distribution - Electron energy analyzers - Gain control - Semiconducting gallium arsenide - Semiconducting indium phosphide - Semiconducting silicon - Semiconductor doping - Semiconductor growth - Semiconductor quantum wells - Substrates;

D O I：

10.1109/68.329626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed 1.3 mum n-type modulation-doped strained-layer quantum-well lasers. Modulation-doped lasers with long cavities (low threshold gain) exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 250 A/cm2 for 1500 mum long lasers with five quantum wells. The estimated threshold current density for an infinite cavity length was 38 A/cm2/well. This is the lowest value for InGaAsP/InGaAsP and InGaAs/InGaAsP quantum well lasers to our knowledge.

引用

页码：1165 / 1166

页数：2

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