ON THE UNIQUENESS OF THE SOLUTION TO THE DRIFT-DIFFUSION MODEL IN SEMICONDUCTOR ANALYSIS

This paper is concerned with the analysis of global uniqueness of the solution to the drift-diffusion models, [9], for stationary flow of charges carriers in semiconductor devices. Two uniqueness cases ate found. Firstly, small applied voltages with a proof introducing new 'quasi-monotony condition' verified for solutions in W1,4-delta and not necessarily in H-2. Secondly, large applied voltage to the semiconductor with small 2D domain, and not large doping functions. These uniqueness cases allow the construction of algorithms that yield converging sequences of solutions.