GENERALIZED PHOTOELECTROMAGNETIC EFFECT IN SEMICONDUCTORS

被引：46
|
作者：
LILE, DL [1 ]
机构：
[1] USN,ELECTR LAB CTR,SAN DIEGO,CA 92152
来源：
PHYSICAL REVIEW B | 1973年 / 8卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.8.4708
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4708 / 4722
页数：15
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