GENERALIZED PHOTOELECTROMAGNETIC EFFECT IN SEMICONDUCTORS

被引：46

作者：

LILE, DL ^{[1
]}

机构：

[1] USN,ELECTR LAB CTR,SAN DIEGO,CA 92152

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.8.4708

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4708 / 4722

页数：15

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