LOW-CARBON INCORPORATION IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING DIMETHYLAMINE GALLANE

被引：3

作者：

ISHIKURA, K ^{[1
]}

HAYASHI, K ^{[1
]}

OGAWA, T ^{[1
]}

HASEGAWA, F ^{[1
]}

机构：

[1] TRI CHEM LAB INC, KANAGAWA 24303, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 7B期

关键词：

DIMETHYLAMINE GALLANE; DMAG; GAAS; MOMBE; CARBON INCORPORATION;

D O I：

10.1143/JJAP.32.L1014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dimethylamine gallane (DMAG) was demonstrated to be a promising precursor as a gallium source for metalorganic moleculor beam epitaxy (MOMBE) of GaAs with a low level of carbon incorporaticn. Epitaxial layers of GaAs were obtained at substrate temperatures above 250-degrees-C, and the hole concentration decreased with increasing substrate temperature. For the GaAs layer grown at 500-degrees-C, the hole concentration and Hall mobility were 1.2 x 10(15) cm-3 and 371 cm2/(V.s), respectively. Low temperature (4.2 K) photoluminescence indicated that the band-to-carbon transition was negligibly small compared with the donor bound exciton peak.

引用

页码：L1014 / L1016

页数：3

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