STRUCTURAL ASPECTS OF HEAVILY CARBON-DOPED GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY (MOMBE)

被引:12
|
作者
FUJIMOTO, I
NISHINE, S
YAMADA, T
KONAGAI, M
TAKAHASHI, K
机构
[1] SUMITOMO ELECT IND LTD,KONOHANA KU,OSAKA 554,JAPAN
[2] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN
来源
关键词
GAAS-C; HEAVY DOPING; X-RAY FORBIDDEN REFLECTION; LATTICE LOCATION; ATOMIC DISPLACEMENT; MOMBE; MISFIT STRAIN;
D O I
10.1143/JJAP.31.L296
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray diffraction analysis has clarified structural features of heavily carbon-doped GaAs films grown by metalorganic molecular beam epitaxy (MOMBE). X-ray quasi-forbidden reflection (XFR) intensity measurements have provided direct evidence that almost all the doped C atoms occupy As sites and cause large displacements of the nearest-neighbouring Ga and the second-nearest-neighbouring As atoms. X-ray rocking curve analysis has also shown that large lattice strain remains unrelaxed even for an epilayer far thicker than the critical thickness, although a high density of misfit dislocations has been observed by X-ray topography.
引用
收藏
页码:L296 / L298
页数:3
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