MODULATED REFLECTANCE STUDY OF STRAIN IN EPITAXIAL GAAS ON SILICON

被引：5
|
作者：
KALLERGI, M
AUBEL, J
SUNDARAM, S
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期
关键词：
D O I：
10.1063/1.343804
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4862 / 4865
页数：4
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