DEFECT STRAIN FIELDS IN EPITAXIAL GAAS

被引：4
|
作者：
WIE, CR
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 24-5卷
关键词：
D O I：
10.1016/0168-583X(87)90708-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：562 / 564
页数：3
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