CHANGE IN WATER-VAPOR ADSORPTION-KINETICS IN CHEMICALLY VAPOR-DEPOSITED SIO2-FILMS AFTER ION IRRADIATION

被引：0

|

作者：

TSEYTLIN, GM

NOSKOV, AG

GERASIMENKO, NN

STENIN, SI

机构：

来源：

THIN SOLID FILMS | 1988年 / 161卷

关键词：

D O I：

10.1016/0040-6090(88)90266-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：343 / 350

页数：8

相关论文

共 50 条

[41] DEVITRIFICATION AND DELAYED CRAZING OF SIO2 ON SINGLE-CRYSTAL SILICON AND CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE
CHOI, DJ
SCOTT, WD
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1987, 70 (10) : C269 - C272
[42] EFFECT OF THE HEAT-TREATMENT ON THE STRUCTURE AND ELECTRIC RESISTIVITY OF W-FILMS VAPOR-DEPOSITED ON SIO2
ARIGA, T
IIDA, M
KUROSU, T
MIYAMOTO, Y
KOROISHI, K
JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1990, 54 (07) : 847 - 852
[43] SILANE OXIDATION STUDY - ANALYSIS OF DATA FOR SIO2-FILMS DEPOSITED BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION
COBIANU, C
PAVELESCU, C
THIN SOLID FILMS, 1984, 117 (03) : 211 - 216
[44] CHARGES AND DEFECTS IN SIO2-FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION AT LOW-TEMPERATURES
IP, BK
KAO, KC
THOMSON, DJ
SOLID-STATE ELECTRONICS, 1991, 34 (02) : 123 - 129
[45] PLANARIZATION OF SIO2-FILMS USING REACTIVE ION-BEAM IN PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
HUO, DTC
YAN, MF
CHANG, CP
FOO, PD
JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6637 - 6642
[46] THE INFLUENCE OF TEMPERATURE AND PRESSURE ON THE STRUCTURE OF REMOTE PLASMA-ENHANCED CHEMICALLY VAPOR-DEPOSITED SIO2 INVESTIGATED BY SPECTROSCOPIC ELLIPSOMETRY
GRUSKA, B
WANDEL, K
THIN SOLID FILMS, 1993, 233 (1-2) : 240 - 243
[47] THERMOCHEMISTRY AND STRUCTURE OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED AND BULK SIO2-P2O5 AND SIO2-GEO2 GLASSES
HUFFMAN, M
NAVROTSKY, A
PINTCHOVSKI, FS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) : 431 - 439
[48] AN EXPERIMENTAL-STUDY OF THE KINETICS AND THERMODYNAMICS OF WATER-VAPOR DISSOLUTION IN A CAO-SIO2-MGO SLAG
ZULIANI, DJ
IWASE, M
MCLEAN, A
MEADOWCROFT, TR
CANADIAN METALLURGICAL QUARTERLY, 1981, 20 (02) : 181 - 187
[49] ON CHANGING MECHANICAL-STRESS IN CHEMICAL VAPOR-DEPOSITED SIO2 BY ION-BOMBARDMENT AND HEAT-TREATMENT
TSEITLIN, GM
NOSKOV, AG
GERASIMENKO, NN
AMIRZHANOV, RM
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 931 - 933
[50] SOME PROPERTIES OF SIO2 FILMS DEPOSITED BY REACTION OF SIH4 WITH WATER VAPOR
HANETA, Y
NAKANUMA, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) : 1176 - +

← 1 2 3 4 5 →