共 50 条
- [31] CRYSTAL ORIENTATION AND NEAR-INTERFACE STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED MOS2 FILMSJOURNAL OF MATERIALS RESEARCH, 1995, 10 (01) : 49 - 53LEE, WYMORE, KL
- [32] ELECTRICAL AND OPTICAL-PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED FLUORINE DOPED SNO2 FILMSPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1986, 96 (02): : K191 - K194REDDY, SRMALLIK, AKJAWALEKAR, SR
- [33] STRESS IN SIO2-FILMS DEPOSITED BY PLASMA AND OZONE TETRAETHYLORTHOSILICATE CHEMICAL VAPOR-DEPOSITION PROCESSESJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (05) : 1437 - 1442RAMKUMAR, KSAXENA, AN
- [34] KINETICS AND MECHANISMS OF HIGH-TEMPERATURE CREEP IN SILICON-CARBIDE .2. CHEMICALLY VAPOR-DEPOSITEDJOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1984, 67 (11) : 732 - 740CARTER, CHDAVIS, RFBENTLEY, J
- [35] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 819 - 823DONG, DIRENE, EAYOUNG, DR
- [36] GRAIN-GROWTH KINETICS DURING ION-BEAM IRRADIATION OF CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICONAPPLIED PHYSICS LETTERS, 1990, 57 (06) : 554 - 556SPINELLA, CLOMBARDO, SCAMPISANO, SU
- [37] TYPE-I ISOTHERMS FOR N-2 ADSORPTION ON VAPOR-DEPOSITED AMORPHOUS SOLID WATERJOURNAL OF CHEMICAL PHYSICS, 1989, 90 (09): : 5207 - 5208PLETZER, RMAYER, E
- [38] ACTIVATION-ENERGIES IN CHEMICAL VAPOR-DEPOSITION KINETICS OF SIO2-FILMS USING TEOS CHEMISTRYTHIN SOLID FILMS, 1990, 190 (01) : L1 - L3PAVELESCU, CKLEPS, I
- [39] DEVITRIFICATION AND DELAYED CRAZING OF SiO2 ON SINGLE-CRYSTAL SILICON AND CHEMICALLY VAPOR-DEPOSITED SILICON NITRIDE.1600, (70):Choi, Doo JinScott, William D.
- [40] CAPABILITY OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2-FILMS AS DIFFUSION-BARRIERS ON INGAASJOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 880 - 886AMBREE, PWANDEL, K