PASSIVATION OF SHALLOW IMPURITY CENTERS IN GALLIUM-ARSENIDE BY ATOMIC-HYDROGEN

被引：0
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作者：
OMELYANOVSKII, EM
PAKHOMOV, AV
POLYAKOV, AY
KULIKOVA, LV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1068 / 1069
页数：2
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