PASSIVATION OF SHALLOW IMPURITY CENTERS IN GALLIUM-ARSENIDE BY ATOMIC-HYDROGEN

被引：0

作者：

OMELYANOVSKII, EM

PAKHOMOV, AV

POLYAKOV, AY

KULIKOVA, LV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 10期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1068 / 1069

页数：2

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