EFFECTS OF QUANTITATIVE DISORDER ON THE ELECTRONIC-STRUCTURES OF SI AND GE

被引：46
|
作者：
TANAKA, K
TSU, R
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 24卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.24.2038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2038 / 2050
页数：13
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