共 50 条
- [1] TEMPERATURE-DEPENDENT ELECTRONIC EXCITATIONS OF THE GE(111)-2X1 SURFACE PHYSICAL REVIEW B, 1986, 34 (02): : 1330 - 1332
- [3] ATOMIC AND ELECTRONIC-STRUCTURES OF (111),(211), AND (311) SURFACES OF GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1167 - 1169
- [5] Temperature-dependent surface relaxations of Ag(111) PHYSICAL REVIEW B, 1999, 59 (02): : 970 - 974
- [6] Temperature-dependent strain relaxation and islanding of Ge/Si(111) EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 295 - 300
- [7] Temperature-dependent strain relaxation and islanding of Ge/Si(111) OPTOELECTRONIC MATERIALS: ORDERING, COMPOSITION MODULATION, AND SELF-ASSEMBLED STRUCTURES, 1996, 417 : 227 - 232
- [9] TEMPERATURE-DEPENDENT ELECTRONIC EXCITATIONS OF THE SI(111) 2X1 SURFACE PHYSICAL REVIEW B, 1985, 31 (06): : 4077 - 4079
- [10] A TEMPERATURE-DEPENDENT LEED STUDY OF THE SI(111) SURFACE BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1994, 98 (03): : 326 - 330