Temperature-dependent strain relaxation and islanding of Ge/Si(111)

被引：0
|
作者：
Deelman, PW [1 ]
Schowalter, LJ [1 ]
Thundat, T [1 ]
机构：
[1] RENSSELAER POLYTECH INST, TROY, NY 12180 USA
来源：
EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY | 1996年 / 399卷
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T [工业技术];
学科分类号：
08 ;
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页码：295 / 300
页数：6
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