COMPARISON OF LATTICE-PARAMETERS OBTAINED FROM AN INTERNAL SILICON MONOCRYSTAL STANDARD

被引：11

作者：

HARTWIG, J

BAKMISIUK, J

BERGER, H

BRUHL, HG

OKADA, Y

GROSSWIG, S

WOKULSKA, K

WOLF, J

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

[2] HUMBOLDT UNIV BERLIN,INST KRISTALLOG & MAT FORSCH,FACHBEREICH PHYS,D-10099 BERLIN,GERMANY

[3] FRIEDRICH SCHILLER UNIV JENA,INST OPT & QUANTENELEKTRON,D-07743 JENA,GERMANY

[4] UNIV LEIPZIG,SEKT PHYS,D-04103 LEIPZIG,GERMANY

[5] SILESIAN UNIV,INST PHYS & CHEM MET,PL-40007 KATOWICE,POLAND

[6] ELECTROTECH LAB,DIV PHYS SCI,TSUKUBA 305,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 142卷 / 01期

关键词：

D O I：

10.1002/pssa.2211420103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lattice parameter of a highly perfect monocrystalline silicon sample is measured in six laboratories using three different diffraction methods. The quality of the measurements and of the applied corrections is already sufficiently high to compare lattice parameters measured by means of the used methods and CuKalpha radiation on an absolute scale with an accuracy of about DELTAa/a = 3 x 10(-6).

引用

页码：19 / 26

页数：8

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