IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES

被引：86
|
作者：
LAU, SS
MATTESON, S
MAYER, JW
REVESZ, P
GYULAI, J
ROTH, J
SIGMON, TW
CASS, T
机构：
[1] CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY
[2] MAX PLANCK INST PLASMA PHYS,D-8046 GARCHING,FED REP GER
[3] STANFORD UNIV,STANFORD,CA 94305
[4] HEWLETT PACKARD CO,IC LAB,PALO ALTO,CA 94304
来源：
APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 01期
关键词：
D O I：
10.1063/1.90564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：76 / 78
页数：3
相关论文
共 50 条
  • [41] ION-IMPLANTATION DISTRIBUTIONS IN CRYSTALLINE MULTILAYER TARGETS
    HAUTALA, M
    KOPONEN, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 28 (02): : 237 - 241
  • [42] ION-IMPLANTATION EFFECTS IN CRYSTALLINE INORGANIC INSULATORS
    PEREZ, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3): : 621 - 627
  • [43] AMORPHIZATION OF NIOBIUM LAYERS BY PHOSPHORUS ION-IMPLANTATION
    LINKER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 969 - 974
  • [44] THE FORMATION OF BURIED OXIDE LAYERS BY ION-IMPLANTATION
    WOODS, TA
    ANTONELLI, E
    COLLINS, RA
    CHIVERS, DJ
    DEARNALEY, G
    VACUUM, 1986, 36 (11-12) : 883 - 885
  • [45] FORMATION OF BURIED NITRIDE LAYERS BY ION-IMPLANTATION
    DANILOWITSCH, J
    GARTNER, K
    GOTZ, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4): : 437 - 439
  • [46] MODIFICATION OF SURFACE-LAYERS BY ION-IMPLANTATION
    GRANT, WA
    WILLIAMS, JS
    SCIENCE PROGRESS, 1976, 63 (249) : 27 - 64
  • [47] ORIENTATION AND STRAIN OF SINGLE AND DOUBLE COSI2 EPITAXIAL LAYERS FORMED BY ION-IMPLANTATION
    VANTOMME, A
    WU, MF
    LANGOUCHE, G
    MAEX, K
    VANDERSTRAETEN, H
    BRUYNSERAEDE, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 680 - 684
  • [48] FORMATION OF HIGH-QUALITY N-LAYERS IN GAAS BY ION-IMPLANTATION
    MCNALLY, PJ
    COMSAT TECHNICAL REVIEW, 1985, 15 (01): : 113 - 125
  • [49] INSITU MEASUREMENT OF CRYSTALLINE-AMORPHOUS TRANSITION IN SI SUBSTRATES DURING ION-IMPLANTATION
    SWART, PL
    LACQUET, BM
    AHARONI, H
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (03) : 464 - 467
  • [50] COMPOSITION AND STRUCTURE OF SI-GE LAYERS PRODUCED BY ION-IMPLANTATION AND LASER MELTING
    BERTI, M
    MAZZI, G
    CALCAGNILE, L
    DRIGO, AV
    MERLI, PG
    MIGLIORI, A
    JOURNAL OF MATERIALS RESEARCH, 1991, 6 (10) : 2120 - 2126
12345