IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES

被引：86
|
作者：
LAU, SS
MATTESON, S
MAYER, JW
REVESZ, P
GYULAI, J
ROTH, J
SIGMON, TW
CASS, T
机构：
[1] CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY
[2] MAX PLANCK INST PLASMA PHYS,D-8046 GARCHING,FED REP GER
[3] STANFORD UNIV,STANFORD,CA 94305
[4] HEWLETT PACKARD CO,IC LAB,PALO ALTO,CA 94304
来源：
APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 01期
关键词：
D O I：
10.1063/1.90564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：76 / 78
页数：3
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