BAND STRUCTURE OF SILICON BY PSEUDO-OPW

被引:6
|
作者
HOCHBERG, AK
WESTGATE, CR
机构
关键词
D O I
10.1016/0022-3697(70)90246-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:2317 / &
相关论文
共 50 条
  • [31] Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k.p model: Conduction band of silicon
    Sverdlov, Viktor A.
    Kosina, Hans
    Selberherr, Siegfried
    MICRO- AND NANOELECTRONICS 2007, 2008, 7025
  • [32] INDIRECT TRANSITIONS AND STRUCTURE OF VALENCE BAND OF SILICON
    SUBASHIEV, VK
    DUBROVSK.GB
    SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (05): : 1017 - +
  • [33] Quantum computation of silicon electronic band structure
    Cerasoli, Frank T.
    Sherbert, Kyle
    Slawinska, Jagoda
    Nardelli, Marco Buongiorno
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (38) : 21816 - 21822
  • [34] Photonic band structure of oxidized macroporous silicon
    Glushko, A.
    Karachevtseva, L.
    OPTO-ELECTRONICS REVIEW, 2006, 14 (03) : 201 - 203
  • [35] BAND STRUCTURE OF SILICON, GERMANIUM, AND RELATED SEMICONDUCTORS
    PHILLIPS, JC
    PHYSICAL REVIEW, 1962, 125 (06): : 1931 - &
  • [36] INFLUENCE OF ENERGY BAND STRUCTURE ON PHOTOEFFCTS IN SILICON
    JUNGK, G
    MENNIGER, H
    PHYSICA STATUS SOLIDI, 1968, 25 (01): : K59 - &
  • [37] INDIRECT TRANSITIONS AND THE STRUCTURE OF THE VALENCE BAND OF SILICON
    SUBASHIEV, VK
    DUBROVSKII, GB
    SOVIET PHYSICS-SOLID STATE, 1964, 6 (05): : 1017 - 1022
  • [38] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM
    HERMAN, F
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732
  • [39] EXPERIMENTAL EVIDENCE ON THE BAND STRUCTURE OF GERMANIUM AND SILICON
    KITTEL, C
    PHYSICA, 1954, 20 (10): : 829 - 833
  • [40] THE ELECTRONIC BAND STRUCTURE OF HEXAGONAL SILICON POLYTYPES
    Chizhova, A. A.
    Nikolskaya, A. A.
    Zaitseva, E. V.
    Konakov, A. A.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2024, 17 (04): : 9 - 19