BAND STRUCTURE OF SILICON, GERMANIUM, AND RELATED SEMICONDUCTORS

被引：100

作者：

PHILLIPS, JC

机构：

来源：

PHYSICAL REVIEW | 1962年 / 125卷 / 06期

关键词：

D O I：

10.1103/PhysRev.125.1931

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1931 / &

共 50 条

[1] BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE
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[3] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM
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[5] VALENCE SEMICONDUCTORS, GERMANIUM AND SILICON
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[6] VALENCE SEMICONDUCTORS, GERMANIUM AND SILICON
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[7] CONDUCTION BAND STRUCTURE OF GERMANIUM-SILICON ALLOYS
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[8] EFFECT OF ALLOYING AND PRESSURE ON BAND STRUCTURE OF GERMANIUM AND SILICON
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[10] VALENCE BAND STRUCTURE OF GERMANIUM-SILICON ALLOYS
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