INVERSE-NARROW-WIDTH EFFECTS AND SMALL-GEOMETRY MOSFET THRESHOLD VOLTAGE MODEL - REPLY

被引：0

|

作者：

HSUEH, KKL

SANCHEZ, JJ

DEMASSA, TA

AKERS, LA

机构：

[1] INTEL CORP,CHANDLER,AZ 85224

[2] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：682 / 682

页数：1

相关论文

共 45 条

[1] INVERSE-NARROW-WIDTH EFFECTS AND SMALL-GEOMETRY MOSFET THRESHOLD VOLTAGE MODEL
HSUEH, KKL
SANCHEZ, JJ
DEMASSA, TA
AKERS, LA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) : 325 - 338
[2] INVERSE-NARROW-WIDTH EFFECTS AND SMALL-GEOMETRY MOSFET THRESHOLD VOLTAGE MODEL - COMMENT
BHATIA, M
GUPTA, RS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 681 - 682
[3] DRAIN-VOLTAGE EFFECTS ON THE THRESHOLD VOLTAGE OF A SMALL-GEOMETRY MOSFET
CHAO, CS
AKERS, LA
PATTANAYAK, DN
SOLID-STATE ELECTRONICS, 1983, 26 (09) : 851 - 860
[4] A 3D analytical model for threshold voltage of small-geometry MOSFET
Noor, A
Shekhar, C
SOLID-STATE ELECTRONICS, 1996, 39 (05) : 745 - 751
[5] A CLOSED-FORM THRESHOLD VOLTAGE EXPRESSION FOR A SMALL-GEOMETRY MOSFET
AKERS, LA
CHAO, CS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 776 - 778
[6] AN ANALYTICAL MODEL FOR THE THRESHOLD VOLTAGE OF A NARROW-WIDTH MOSFET
CHENG, YC
LAI, PT
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1814 - 1823
[7] THRESHOLD VOLTAGE OF A NARROW-WIDTH MOSFET
AKERS, LA
ELECTRONICS LETTERS, 1981, 17 (01) : 49 - 51
[8] THRESHOLD VOLTAGE OF SMALL-GEOMETRY SI MOSFETS
DEMASSA, TA
CHIEN, HS
SOLID-STATE ELECTRONICS, 1986, 29 (04) : 409 - 419
[9] A NEW THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY BURIED-CHANNEL MOSFETS
WU, CY
HSU, KC
SOLID-STATE ELECTRONICS, 1985, 28 (12) : 1283 - 1289
[10] A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET
JANG, WY
WU, CY
WU, HJ
SOLID-STATE ELECTRONICS, 1988, 31 (09) : 1421 - 1431

← 1 2 3 4 5 →