INVERSE-NARROW-WIDTH EFFECTS AND SMALL-GEOMETRY MOSFET THRESHOLD VOLTAGE MODEL - REPLY

被引：0
|
作者：
HSUEH, KKL
SANCHEZ, JJ
DEMASSA, TA
AKERS, LA
机构：
[1] INTEL CORP,CHANDLER,AZ 85224
[2] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 03期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：682 / 682
页数：1
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