首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
A CLOSED-FORM THRESHOLD VOLTAGE EXPRESSION FOR A SMALL-GEOMETRY MOSFET
被引:3
|
作者
:
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
AKERS, LA
CHAO, CS
论文数:
0
引用数:
0
h-index:
0
CHAO, CS
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1982年
/ 29卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1982.20776
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:776 / 778
页数:3
相关论文
共 50 条
[1]
DRAIN-VOLTAGE EFFECTS ON THE THRESHOLD VOLTAGE OF A SMALL-GEOMETRY MOSFET
CHAO, CS
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
CHAO, CS
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
AKERS, LA
PATTANAYAK, DN
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
PATTANAYAK, DN
SOLID-STATE ELECTRONICS,
1983,
26
(09)
: 851
-
860
[2]
A 3D analytical model for threshold voltage of small-geometry MOSFET
Noor, A
论文数:
0
引用数:
0
h-index:
0
机构:
IC Design Group, SDA, Ctrl. Electronics Eng. Res. Inst.
Noor, A
Shekhar, C
论文数:
0
引用数:
0
h-index:
0
机构:
IC Design Group, SDA, Ctrl. Electronics Eng. Res. Inst.
Shekhar, C
SOLID-STATE ELECTRONICS,
1996,
39
(05)
: 745
-
751
[3]
INVERSE-NARROW-WIDTH EFFECTS AND SMALL-GEOMETRY MOSFET THRESHOLD VOLTAGE MODEL
HSUEH, KKL
论文数:
0
引用数:
0
h-index:
0
机构:
ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
HSUEH, KKL
SANCHEZ, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
SANCHEZ, JJ
DEMASSA, TA
论文数:
0
引用数:
0
h-index:
0
机构:
ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
DEMASSA, TA
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
AKERS, LA
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1988,
35
(03)
: 325
-
338
[4]
THRESHOLD VOLTAGE OF SMALL-GEOMETRY SI MOSFETS
DEMASSA, TA
论文数:
0
引用数:
0
h-index:
0
机构:
Arizona State Univ, Tempe, AZ, USA, Arizona State Univ, Tempe, AZ, USA
DEMASSA, TA
CHIEN, HS
论文数:
0
引用数:
0
h-index:
0
机构:
Arizona State Univ, Tempe, AZ, USA, Arizona State Univ, Tempe, AZ, USA
CHIEN, HS
SOLID-STATE ELECTRONICS,
1986,
29
(04)
: 409
-
419
[5]
AN ANALYTICAL EXPRESSION FOR THE THRESHOLD VOLTAGE OF A SMALL GEOMETRY MOSFET
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RES CTR,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RES CTR,ANAHEIM,CA 92803
AKERS, LA
SOLID-STATE ELECTRONICS,
1981,
24
(07)
: 621
-
627
[6]
INVERSE-NARROW-WIDTH EFFECTS AND SMALL-GEOMETRY MOSFET THRESHOLD VOLTAGE MODEL - COMMENT
BHATIA, M
论文数:
0
引用数:
0
h-index:
0
BHATIA, M
GUPTA, RS
论文数:
0
引用数:
0
h-index:
0
GUPTA, RS
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1993,
40
(03)
: 681
-
682
[7]
INVERSE-NARROW-WIDTH EFFECTS AND SMALL-GEOMETRY MOSFET THRESHOLD VOLTAGE MODEL - REPLY
HSUEH, KKL
论文数:
0
引用数:
0
h-index:
0
机构:
INTEL CORP,CHANDLER,AZ 85224
HSUEH, KKL
SANCHEZ, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
INTEL CORP,CHANDLER,AZ 85224
SANCHEZ, JJ
DEMASSA, TA
论文数:
0
引用数:
0
h-index:
0
机构:
INTEL CORP,CHANDLER,AZ 85224
DEMASSA, TA
AKERS, LA
论文数:
0
引用数:
0
h-index:
0
机构:
INTEL CORP,CHANDLER,AZ 85224
AKERS, LA
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1993,
40
(03)
: 682
-
682
[8]
A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET
JANG, WY
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED MICROELECTR CORP, HSIN CHU, TAIWAN
UNITED MICROELECTR CORP, HSIN CHU, TAIWAN
JANG, WY
WU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED MICROELECTR CORP, HSIN CHU, TAIWAN
UNITED MICROELECTR CORP, HSIN CHU, TAIWAN
WU, CY
WU, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED MICROELECTR CORP, HSIN CHU, TAIWAN
UNITED MICROELECTR CORP, HSIN CHU, TAIWAN
WU, HJ
SOLID-STATE ELECTRONICS,
1988,
31
(09)
: 1421
-
1431
[9]
A class of LDPC erasure distributions with closed-form threshold expression
论文数:
引用数:
h-index:
机构:
Paolini, Enrico
论文数:
引用数:
h-index:
机构:
Chiani, Marco
2007 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATIONS, VOLS 1-14,
2007,
: 659
-
664
[10]
A NEW METHOD FOR MEASURING THE THRESHOLD VOLTAGE OF SMALL-GEOMETRY MOSFETS FROM SUBTHRESHOLD CONDUCTION
DEEN, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
School of Engineering Science, Simon Fraser University, Burnaby
DEEN, MJ
YAN, ZX
论文数:
0
引用数:
0
h-index:
0
机构:
School of Engineering Science, Simon Fraser University, Burnaby
YAN, ZX
SOLID-STATE ELECTRONICS,
1990,
33
(05)
: 503
-
511
←
1
2
3
4
5
→