DIELECTRIC-PROPERTIES OF NONSQUARE ALGAAS/GAAS SINGLE QUANTUM-WELLS AT PHOTON ENERGIES BELOW THE BAND-GAP

被引：5

作者：

LI, EH ^{[1
]}

WEISS, BL ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT PHYS,CINCINNATI,OH 45221

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期

关键词：

D O I：

10.1063/1.105716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The complex dielectric function of square and hyperbolic AlGaAs/GaAs single quantum wells have been calculated to predict the refractive index differences at photon energies below the band gap. The results show that, at these photon energies, the refractive index of a single hyperbolic quantum well exceeds that of the as-grown square quantum well during the initial stages of disordering, after which it decreases with increasing disorder. These results also predict the onset of antiguiding in multiple quantum well waveguides, which has been observed previously.

引用

页码：3312 / 3314

页数：3

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