Temperature dependence of the band gap in (InGa)(AsN)/GaAs single quantum wells

被引：0
|
作者：
Polimeni, A [1 ]
Capizzi, M [1 ]
Geddo, M [1 ]
Fischer, M [1 ]
Reinhardt, M [1 ]
Forchel, A [1 ]
机构：
[1] Univ Roma La Sapienza, Dipartimento Fis, INFM, I-00185 Rome, Italy
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic properties of InxGa1-xAs1-yNy/GaAs single quantum wells (QW's) have been investigated by photoluminescence and photoreflectance spectroscopy. The thermal red-shift of the ground state recombination energy between low (T = 10 K) and room temperature in QW's containing N is smaller than that found in N-free samples. An anticrossing between states of the conduction band edge and a N-induced localized level resonant with the conduction band accounts for this finding. An estimate of the strength of the band interaction as a function of N concentration is obtained in good agreement with two-band model predictions.
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页码：539 / 540
页数：2
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