Temperature dependence of the band gap in (InGa)(AsN)/GaAs single quantum wells

被引：0

作者：

Polimeni, A ^{[1
]}

Capizzi, M ^{[1
]}

Geddo, M ^{[1
]}

Fischer, M ^{[1
]}

Reinhardt, M ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Roma La Sapienza, Dipartimento Fis, INFM, I-00185 Rome, Italy

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic properties of InxGa1-xAs1-yNy/GaAs single quantum wells (QW's) have been investigated by photoluminescence and photoreflectance spectroscopy. The thermal red-shift of the ground state recombination energy between low (T = 10 K) and room temperature in QW's containing N is smaller than that found in N-free samples. An anticrossing between states of the conduction band edge and a N-induced localized level resonant with the conduction band accounts for this finding. An estimate of the strength of the band interaction as a function of N concentration is obtained in good agreement with two-band model predictions.

引用

页码：539 / 540

页数：2

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