OPTICAL-PROPERTIES OF FREESTANDING SILICON QUANTUM WIRES

被引：60

作者：

SANDERS, GD ^{[1
]}

CHANG, YC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present theoretical studies of the optical properties of free-standing Si quantum wires, using an empirical tight-binding model, which includes d orbitals and second-neighbor interactions. The excitonic effects are included within the effective-mass approximation. The predicted exciton transition energy for a quantum wire with a width of 27 angstrom agrees with the observed luminescence for a sample of similar size. We found that the thermally averaged exciton oscillator strengths for quantum wires with widths around 8 angstrom can become comparable to that of bulk GaAs.

引用

页码：2525 / 2527

页数：3

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