OPTICAL-PROPERTIES OF FREESTANDING SILICON QUANTUM WIRES

被引：60
|
作者：
SANDERS, GD [1 ]
CHANG, YC [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期
关键词：
D O I：
10.1063/1.106927
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present theoretical studies of the optical properties of free-standing Si quantum wires, using an empirical tight-binding model, which includes d orbitals and second-neighbor interactions. The excitonic effects are included within the effective-mass approximation. The predicted exciton transition energy for a quantum wire with a width of 27 angstrom agrees with the observed luminescence for a sample of similar size. We found that the thermally averaged exciton oscillator strengths for quantum wires with widths around 8 angstrom can become comparable to that of bulk GaAs.
引用
收藏
页码：2525 / 2527
页数：3
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