GROWTH AND EPITAXY OF YB SILICIDES ON SI(111)

被引：24

作者：

WIGREN, C

ANDERSEN, JN

NYHOLM, R

KARLSSON, UO

机构：

[1] MAX-LAB, Lund University, Lund

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.577549

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Yb silicides have been grown epitaxially on the Si(111) surface using solid-state epitaxy with annealing to 400-degrees-C. The amount of deposited Yb was varied from parts of a monolayer to films being about 40 monolayer thick. Auger- and photoelectron spectroscopy showed that Si segregates into the Yb overlayer at room temperature and that a strong reaction occurs during annealing to 400-degrees-C leading to the formation of thick silicides. The epitaxial silicides showed a 1 x 1 or a unroofed-radical 3 x unroofed-radical 3 low-energy electron diffraction pattern depending on the detailed preparation procedure. The composition of the silicide was found to be YbSi2-x.

引用

页码：1942 / 1945

页数：4

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