Phase transitions in Yb/Si(111) and Sm/Si(111) film structures

被引:0
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作者
Krachino, TV [1 ]
Kuz'mim, MV [1 ]
Loginov, MV [1 ]
Mittsev, MA [1 ]
机构
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The initial stages in the formation of Yb/Si(1 1 1) and Sm/Si(1 1 1) interfaces were studied by a variety,of experimental methods. An adsorbate submonolayer consisting of two-dimensional domains was found to form on the Si surface in a wide temperature range. The domain structure depends on rare-earth surface density and varies discretely. The nucleation of 3 x 2 domains in two-dimensional vapor and subsequent;transitions to denser reconstructions constitute a series of first-order phase transitions. The coverage dependence of the activation energy for desorption is examined. A model is proposed for explaining the sharp increase in the binding energy between-the adsorbed rare-earth atoms and Si surface upon the 2D vapor --> 3 x 2 domain transition. It is Suggested that the phase transition and domain formation can-he thought of as self-organization of the system.
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页码:540 / 543
页数:4
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