THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON VARIOUSLY RECONSTRUCTED GAAS (111)B SURFACES

Mass spectrometry was applied to study the thermal decomposition of triethylgallium (TEG) on a GaAs (111) B surface. Gallium-containing species desorbed or reflected from three kinds of differently reconstructed surfaces were measured at 420-degrees-C. The signal intensities of the Ga containing species changed largely with the surface reconstruction in the following order: 2 X 2 As stabilized > square-root 19 X square-root 19 Ga stabilized > 1 X 1 Ga saturated. This result indicates that larger As coverage suppresses the thermal decomposition of TEG on a GaAs (111) B surface.