THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON VARIOUSLY RECONSTRUCTED GAAS (111)B SURFACES

被引:16
|
作者
OHKI, Y [1 ]
HIRATANI, Y [1 ]
SASAKI, M [1 ]
机构
[1] OPTOELECTR TECHNOL RES LAB,TSUKUBA,IBARAKI 30026,JAPAN
关键词
D O I
10.1063/1.105945
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mass spectrometry was applied to study the thermal decomposition of triethylgallium (TEG) on a GaAs (111) B surface. Gallium-containing species desorbed or reflected from three kinds of differently reconstructed surfaces were measured at 420-degrees-C. The signal intensities of the Ga containing species changed largely with the surface reconstruction in the following order: 2 X 2 As stabilized > square-root 19 X square-root 19 Ga stabilized > 1 X 1 Ga saturated. This result indicates that larger As coverage suppresses the thermal decomposition of TEG on a GaAs (111) B surface.
引用
收藏
页码:2538 / 2540
页数:3
相关论文
共 50 条