THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100)

被引：9
|
作者：
MURRELL, AJ [1 ]
WEE, ATS [1 ]
FAIRBROTHER, DH [1 ]
SINGH, NK [1 ]
FOORD, JS [1 ]
DAVIES, GJ [1 ]
ANDREWS, DA [1 ]
机构：
[1] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND
来源：
VACUUM | 1990年 / 41卷 / 4-6期
关键词：
D O I：
10.1016/0042-207X(90)93832-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The adsorption and thermal decomposition of triethylgallium (TEG) on GaAs has been studied using thermal desorption and XPS techniques. Pure Ga films are deposited when adsorbed TEG layers on GaAs are heated in a reaction which competes with TEG and diethylgallium (DEG) desorption. Ethene, ethene and hydrogen are detected as the decomposition products of the overall cracking reaction. © 1990.
引用
收藏
页码：955 / 957
页数：3
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