BENT-BAND THEORY OF CONDUCTIVITY IN HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES

被引：6

|

作者：

TAKESHIMA, M

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.36.1186

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：1186 / 1203

页数：18

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