BENT-BAND THEORY OF CONDUCTIVITY IN HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES

被引：6
|
作者：
TAKESHIMA, M
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.36.1186
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1186 / 1203
页数：18
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