THEORY OF STATIC RESIDUAL CONDUCTIVITY IN HEAVILY DOPED SEMICONDUCTORS

被引：5

作者：

JONES, R

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1970年 / 3卷 / 01期

关键词：

D O I：

10.1088/0022-3719/3/1/021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：190 / +

页数：1

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