THEORY OF STATIC RESIDUAL CONDUCTIVITY IN HEAVILY DOPED SEMICONDUCTORS

被引：5
|
作者：
JONES, R
机构：
来源：
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1970年 / 3卷 / 01期
关键词：
D O I：
10.1088/0022-3719/3/1/021
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：190 / +
页数：1
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