QUANTUM-WELL INGAASP/INP LASERS

An investigation is reported of InGaAsP/InP heterojunction lasers (emitting at 1.55 mu m) with quantum-well layers formed by MOCVD epitaxy. A description is given of the geometry of the quantum-well layers. The Auger electron profile and the watt-ampere characteristics are reported. The main parameters of these quantum-well lasers are analysed and it is shown that they have low threshold currents, a narrow luminescence spectrum, and low optical losses (less than 13 cm(-1)). Moreover, their characteristic temperature is higher than that of lasers made from bulk crystals.